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| MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD20HMF1 DRAWING 22.0+/-0.3 18.0+/-0.3 7.2+/-0.5 7.6+/-0.3 4-C1 RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor,900MHz,20W OUTLINE RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers applications. High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ. 2 3 R1.6 14.0+/-0.4 6.6+/-0.3 FEATURES 1 APPLICATION For output stage of high power amplifiers in 900MHz band Mobile radio sets. 2.3+/-0.3 2.8+/-0.3 0.10 3.0+/-0.4 5.1+/-0.5 PIN 1.Drain 2.Source 3.Gate UNIT:mm RoHS COMPLIANT RD20HMF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter "G" after the Lot Marking. ABSOLUTE MAXIMUM RATINGS (Tc=25C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25C Zg=Zl=50 junction to case RATINGS 30 +/-20 71.4 6 6 175 -40 to +175 2.1 UNIT V V W W A C C C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS SYMBOL IDSS IGSS VTH Pout D PARAMETER (Tc=25C, UNLESS OTHERWISE NOTED) CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=900MHz ,VDD=12.5V Pin=3.0W, Idq=1.0A VDD=15.2V,Po=20W(PinControl) Idq=1.0A,Zg=50 Load VSWR=20:1(All Phase) MIN 1.0 20 50 LIMITS TYP MAX. 5 1 3.0 25 55 No destroy UNIT uA uA V W % - Zero gate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance Note : Above parameters , ratings , limits and conditions are subject to change. RD20HMF1 MITSUBISHI ELECTRIC 1/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD20HMF1 RoHS Compliance, TYPICAL CHARACTERISTICS Silicon MOSFET Power Transistor,900MHz,20W 100 CHANNEL DISSIPATION Pch(W) 80 60 40 20 0 0 CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE Vgs-Ids CHARACTERISTICS 10 Ta=+25C Vds=10V 8 6 Ids(A) 4 2 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C) 0 1 2 3 Vgs(V) 4 5 Vds-Ids CHARACTERISTICS 10 Ta=+25C Vgs=5V Vds VS. Ciss CHARACTERISTICS 100 Ta=+25C f=1MHz Vgs=4.5V 8 6 Ids(A) 80 60 40 20 0 0 5 10 Vds(V) 15 20 Vgs=4V 4 2 Vgs=3.5V Vgs=3V Vgs=2.5V 0 0 2 4 6 Vds(V) 8 10 Vgs=2V Vds VS. Coss CHARACTERISTICS 140 120 100 Coss(pF) 80 60 40 20 0 0 5 10 Vds(V) 15 20 Crss(pF) Ta=+25C f=1MHz Ciss(pF) Vds VS. Crss CHARACTERISTICS 14 12 10 8 6 4 2 0 0 5 10 Vds(V) 15 20 Ta=+25C f=1MHz RD20HMF1 MITSUBISHI ELECTRIC 2/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD20HMF1 Pin-Po CHARACTERISTICS 120 100 Po RoHS Compliance, TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 50 40 30 20 10 0 20 25 30 Pin(dBm) 35 40 Ta=+25C f=900MHz Vdd=12.5V Idq=1.0A Silicon MOSFET Power Transistor,900MHz,20W 100 80 60 d(%) 40 20 0 Pout(W) , Idd(A) 30 25 20 15 d Po(dBm) , Gp(dB) , Idd(A) Po 80 60 Ta=25C f=900MHz Vdd=12.5V Idq=1.0A 10 5 0 0 1 2 Idd 40 20 0 Gp 3 Pin(W) 4 5 6 Vdd-Po CHARACTERISTICS 35 30 25 Po(W) 20 15 Idd Ta=25C f=900MHz Pin=3.0W Idq=1.0A Zg=ZI=50 ohm Po 7 6 5 Idd(A) 4 3 2 1 0 4 6 8 10 Vdd(V) 12 14 10 5 0 RD20HMF1 MITSUBISHI ELECTRIC 3/7 d(%) 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD20HMF1 RoHS Compliance, TEST CIRCUIT(f=900MHz) Silicon MOSFET Power Transistor,900MHz,20W RD20HMF1 MITSUBISHI ELECTRIC 4/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD20HMF1 f=900MHz Zout RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=900MHz Zin Zo=10 Zin , Zout f (MHz) 900 Zin (ohm) 1.78+j2.50 Zout (ohm) 2.52+j1.76 Conditions Po=20W, Vdd=12.5V,Pin=3W RD20HMF1 MITSUBISHI ELECTRIC 5/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W RD20HMF1 S-PARAMETER DATA (@Vdd=12.5V,Id=800mA) RD20HMF1 MITSUBISHI ELECTRIC 6/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. RD20HMF1 MITSUBISHI ELECTRIC 7/7 10 Jan 2006 |
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